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NCE6005AS Datasheet PDF

NCE Power Semiconductor NCE6005AS

The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Part No. NCE6005AS
Datasheet NCE6005AS Download
Manufacturer
NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
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NCE6005AS datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

● VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE6005AS NCE6005AS SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute
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